Author:
Bates S.J.,Furetta C.,Glaser M.,Lemeilleur F.,León-Florián E.,Gößling C.,Kaiser B.,Rolf A.,Wunstorf R.,Feick H.,Fretwurst E.,Lindström G.,Moll M.,Taylor G.,Chilingarov A.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
12 articles.
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1. Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films;Materials Science and Engineering: B;2015-12
2. Comparison between high-energy proton and charged pion induced damage in PbWO4 calorimeter crystals;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2008-03
3. Simulation of non-ionising energy loss and defect formation in silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-09
4. Determination of effective trapping times for electrons and holes in irradiated silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2002-01
5. Design and test of pixel sensors for operation in severe radiation environments;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2000-01