Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C-Reference-Cited by-同舟云学术

Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

Published:1995-06 Issue:1-2 Volume:360 Page:438-444
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Lemeilleur F,Bates S.J,Chilingarov A,Furetta C,Glaser M,Heijne E.H.M,Jarron P,Leroy C,Soave C,Trigger I

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Annealing behaviour of capacitance-voltage characteristics at low temperature;Sotthibandhu;RD20 Collaboration, CERN Technical Note TN/7,1992

4. Study of electrical properties and charge collection of silicon detectors under neutron, proton and gamma irradiations;Leroy,1993

5. these Proceedings (6th Pisa Meeting on Advanced Detectors);Feick,1995

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