Effect of the orientations and polarities of GaAs substrates CdTe buffer layer structural properties-Reference-Cited by-同舟云学术

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Effect of the orientations and polarities of GaAs substrates CdTe buffer layer structural properties

Published:1993-01 Issue:1-3 Volume:16 Page:145-150
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Tromson-Carli A.,Patriarche G.,Druilhe R.,Lusson A.,Marfaing Y.,Triboulet R.,Brown P.D.,Brinkman A.W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAs

2. The effect of growth orientation on the morphology, composition, and growth rate of mercury cadmium telluride layers grown by metalorganic vapor phase epitaxy

3. Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)Bsubstrates

4. Low temperature growth of (Cd,Hg) Te layers by MOVPE

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1. Effect of Piezoelectric Filed on the Optical Properties of (311) A and (311) B Oriented InAlAs/InP Heterostructures;Perovskite and Piezoelectric Materials;2021-01-27

2. Effect of substrate polarity on the optical and vibrational properties of (311)A and (311) B oriented InAlAs/InP heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2019-08

3. Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures;Results in Physics;2019-03

4. Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates;Applied Physics A;2019-01-29

5. Real-Time In Situ Monitoring of GaAs (211) Oxide Desorption and CdTe Growth by Spectroscopic Ellipsometry;Journal of Electronic Materials;2012-04-20

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