Molecular beam epitaxy and characterization of CdTe(211) and CdTe(133) films on GaAs(211)Bsubstrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105041
Reference9 articles.
1. Molecular beam epitaxial growth of CdTe on 5‐in.‐diam Si (100)
2. CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization
3. Influence of Ga‐As‐Te interfacial phases on the orientation of epitaxial CdTe on GaAs
4. Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces
5. Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)
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