Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAs-Reference-Cited by-同舟云学术

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Low temperature MOCVD of Hg1−xCdxTe on 311, 511, 711 and shaped GaAs

Published:1991-01 Issue:1-4 Volume:107 Page:610-620
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pain G.N.,Sandford C.,Smith G.K.G.,Stevenson A.W.,Gao D.,Wielunski L.S.,Russo S.P.,Reeves G.K.,Elliman R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Digital circuit on x = 0.35 Hg1−xCdxTe

2. Optically pumped laser oscillation at ≊2.9 μm of a HgCdTe layer grown by metalorganic chemical vapor deposition

3. D.L. Dreifus, R.M. Kolbas, J. Han, J. Cook, Jr. and J. Schetzina, J. Vacuum Sci. Technol., in press.

4. MESFET fabrication on MOCVD grown Hg1-xCdxTe

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1. Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation;Materials Letters;2012-07

2. An electron microscopy study on the formation mechanism of hillocks on the (100)CdTe/GaAs;Journal of Crystal Growth;1998-08

3. Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1996-02-15

4. The growth and characterization of (211) and (133) Oriented (Hg,Cd)Te epilayers (211)B GaAs by organometallic vapor phase epitaxy;Journal of Electronic Materials;1995-09

5. Metalorganic vapour phase epitaxy of mercury cadmium telluride;Progress in Crystal Growth and Characterization of Materials;1994-01

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