Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy
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Published:1996-02-15
Issue:Part 2, No. 2B
Volume:35
Page:L195-L197
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Guo Li-Qi,Konagai Makoto
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering