Low temperature growth of (Cd,Hg) Te layers by MOVPE-Reference-Cited by-同舟云学术

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Low temperature growth of (Cd,Hg) Te layers by MOVPE

Published:1991-01 Issue:1-4 Volume:107 Page:626-631
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Desjonquères F.,Tromson-Carli A.,Cheuvart P.,Druilhe R.,Grattepain C.,Katty A.,Marfaing Y.,Triboulet R.,Lorans D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Plasma enhanced chemical vapor deposition of epitaxial mercury telluride

2. Device quality Hg1−xCdxTe material by low‐temperature precracking metalorganic chemical vapor deposition

3. Proc. NATO Workshop;Mullin,1988

4. Temperature-independent unassisted pyrolytic MOCVD growth of cadmium telluride at 250°C using 2,5-dihydrotellurophene

5. Low‐temperature growth of HgTe and HgCdTe using methylallyltelluride

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel modulated flow technique for the OMCVD growth of CdHgTe at 300°C;Materials Letters;1994-04

2. Metalorganic vapour phase epitaxy of mercury cadmium telluride;Progress in Crystal Growth and Characterization of Materials;1994-01

3. Misfit accommodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs;Journal de Physique III;1993-06

4. Imperfections in II–VI semiconductor layers epitaxially grown by organometallic chemical vapour deposition on GaAs;Journal of Crystal Growth;1993-04

5. Effect of the orientations and polarities of GaAs substrates CdTe buffer layer structural properties;Materials Science and Engineering: B;1993-01

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