Stacking fault pyramids, island growth and misfit dislocations in InxGa1−xAs/InP heterostructures grown by vapour phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Epitaxial Growth;Matthews,1975
2. Defect structure in III‐V compound semiconductors: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride transport vapor‐phase epitaxy
3. Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Correlation of early-stage growth process conditions with dislocation evolution in MOCVD-based GaP/Si heteroepitaxy;Journal of Crystal Growth;2021-10
2. A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD;Crystal Growth & Design;2021-08-23
3. Tunnel Junction with Autodoped AlGaAs on InP;Journal of Electronic Materials;2013-07-30
4. Transmission electron microscopy and cathodoluminescence of tensile‐strained GaxIn1−xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation;Journal of Applied Physics;1996-07-15
5. Dislocation generation mechanisms of InxGa1−xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy;Journal of Applied Physics;1994-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3