Defect structure in III‐V compound semiconductors: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride transport vapor‐phase epitaxy-Reference-Cited by-同舟云学术

Defect structure in III‐V compound semiconductors: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride transport vapor‐phase epitaxy

Published:1986-05-15 Issue:10 Volume:59 Page:3441-3447
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chu S. N. G.,Nakahara S.,Karlicek R. F.,Strege K. E.,Mitcham D.,Johnston W. D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.336812

Reference12 articles.

1. Interfacial lattice mismatch effects in III–V compounds

2. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals

3. Comparison of Defect Formation in InGaAsP/InP and GaAlAs/GaAs

4. The mechanism of optically induced degradation in InP/In1−xGaxAsyP1−yheterostructures

5. Cathodoluminescence evaluation of dark spot defects in InP/InGaAsP light‐emitting diodes

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3. Intrinsic asymmetry between the [011] and [011̄] crystallographic directions in the In0.52Al0.48As/InP matched system;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-09

4. Dislocation generation mechanisms of InxGa1−xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy;Journal of Applied Physics;1994-02

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