Dislocation generation mechanisms of InxGa1−xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356386
Reference21 articles.
1. High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm
2. Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy
3. Stacking fault pyramids, island growth and misfit dislocations in InxGa1−xAs/InP heterostructures grown by vapour phase epitaxy
4. Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001)
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1. Structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
2. High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001);Journal of Crystal Growth;2005-05
3. High-mobility InGaAs∕InAlAs pseudomorphic heterostructures on InP (001);Journal of Applied Physics;2005-03
4. Advanced InGaAs detectors on GaAs substrates;SPIE Proceedings;2000-12-15
5. Optimisation of InGaAs infrared photovoltaic detectors;IEE Proceedings - Optoelectronics;1999-08-01
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