Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference46 articles.
1. Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Structurally and Electrically Uniform Deposition of High-k TiO[sub 2] Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition
4. MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs
5. Charge trapping and reliability characteristics of sputtered Y2O3high-kdielectrics on N- and S-passivated germanium
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