Charge trapping and reliability characteristics of sputtered Y2O3high-kdielectrics on N- and S-passivated germanium-Reference-Cited by-同舟云学术

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Charge trapping and reliability characteristics of sputtered Y2O3high-kdielectrics on N- and S-passivated germanium

Published:2009-07-03 Issue:8 Volume:24 Page:085006
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mahata C,Bera M K,Das T,Mallik S,Hota M K,Majhi B,Verma S,Bose P K,Maiti C K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors

2. Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric

3. Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium

4. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

5. Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

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1. Interface Optimization of Passivated Er2O3/Al2O3/InP MOS Capacitors and Modulation of Leakage Current Conduction Mechanism;IEEE Transactions on Electron Devices;2021-06

2. Adsorption of CO, H2S and CH4 molecules on SnS2 monolayer: a first-principles study;Molecular Physics;2020-12-15

3. Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition;Materials Science in Semiconductor Processing;2018-11

4. Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-03

5. TCAD performance analysis of high-K dielectrics for gate all around InAs nanowire transistor considering scaling of gate dielectric thickness;Microelectronic Engineering;2016-07

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