MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs-Reference-Cited by-同舟云学术

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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

Published:2007-11-01 Issue:12 Volume:22 Page:1272-1275
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Abermann S,Pozzovivo G,Kuzmik J,Strasser G,Pogany D,Carlin J-F,Grandjean N,Bertagnolli E

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Power electronics on InAlN/(In)GaN: Prospect for a record performance

2. InAlN/GaN HEMTs: a first insight into technological optimization

3. Small-signal characteristics of AlInN/GaN HEMTs

4. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

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1. Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor;physica status solidi (a);2024-07-21

2. Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment;Nanomaterials;2024-03-14

3. O₂ Plasma Alternately Treated ALD-Al₂O₃ as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs;IEEE Access;2024

4. Influence of pulsed laser deposited hafnium oxide thin film as gate dielectric on the fabrication of Al0.1Ga0.9N/GaN MOS-HEMT;Materials Science in Semiconductor Processing;2023-01

5. Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb₂O₅ gate dielectric;Physica Scripta;2022-12-01

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