Dislocation evolution along the growth direction of 2-inch GaN crystal grown by Na-flux LPE-Reference-Cited by-同舟云学术

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Dislocation evolution along the growth direction of 2-inch GaN crystal grown by Na-flux LPE

Published:2021-05 Issue: Volume:126 Page:105684
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Yang Tao,Hao Hangfei,Yin Yucong,Yang Chen,Feng Maorong,Ma Ming,Fan Shiji,Li Zhenrong

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Preparation of GaN single crystals using a Na flux;Yamane;Chem. Mater.,1997

2. III–nitrides: growth, characterization, and properties;Jain;J. Appl. Phys.,2000

3. Current status of GaN power devices;Kachi;IEICE Electron. Express,2013

4. Curvature and bow of bulk GaN substrates;Foronda;J. Appl. Phys.,2016

5. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes;Schubert;Appl. Phys. Lett.,2007

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals;Crystal Growth & Design;2024-08-22

2. Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method;Journal of Materials Science;2024-04-12

3. Studying the effect of temperature and pressure on GaN crystals via the Na-flux method;CrystEngComm;2024

4. Progress of Na-Flux Method for Large-Size GaN Single Crystal Growth;Journal of Electronic Materials;2022-09-16

5. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN;CrystEngComm;2021

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