Curvature and bow of bulk GaN substrates-Reference-Cited by-同舟云学术

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Curvature and bow of bulk GaN substrates

Published:2016-07-21 Issue:3 Volume:120 Page:035104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Foronda Humberto M.¹,Romanov Alexey E.¹²³,Young Erin C.¹,Robertson Christian A.¹,Beltz Glenn E.⁴,Speck James S.¹

Affiliation:

1. Materials Department, UCSB, Santa Barbara, California 93106, USA

2. Ioffe Physico-Technical Institute RAS, St. Petersburg 194021, Russia

3. ITMO University, St. Petersburg 197101, Russia

4. Mechanical Engineering Department, UCSB, Santa Barbara, California 93106, USA

Funder

King Abdullah University of Science and Technology (KAUST)

King Abdulaziz City for Science and Technology (KACST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4959073

Reference35 articles.

1. Let There Be Light-With Gallium Nitride: The 2014 Nobel Prize in Physics

2. Improved growth rates and purity of basic ammonothermal GaN

3. The role of threading dislocations in the physical properties of GaN and its alloys

4. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

5. Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations

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2. Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method;Journal of Materials Science;2024-04-12

3. Growth of thick GaN films on 2-inch ScAlMgO4 substrates by halide vapor phase epitaxy;Journal of Crystal Growth;2024-01

4. Preparation of a freestanding GaN substrate in the Na-flux method by laser-assisted separation;Japanese Journal of Applied Physics;2023-12-01

5. Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface;Vacuum;2023-06

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