Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference22 articles.
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2. The status of SiC bulk growth from an industrial point of view;Müller;J. Cryst. Growth,2000
3. Comparative study on mechanical properties of three different SiC polytypes (3C, 4H and 6H) under high pressure: first-principle calculations;Peivaste;Vacuum,2018
4. Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure;Pandey;Vacuum,2020
5. Relationship between basal plane dislocation distribution and local basal plane bending in PVT-grown 4H-SiC crystals;Ailihumaer;J. Electron. Mater.,2020
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