Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions
Author:
Funder
CSIR-CEERI
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference40 articles.
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5. Ideal Ni-Based 4H–SiC Schottky barrier diodes with Si intercalation;Gao;Mater. Sci. Semicond. Process.,2020
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