Ideal Ni-Based 4H–SiC Schottky barrier diodes with Si intercalation-Reference-Cited by-同舟云学术

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Ideal Ni-Based 4H–SiC Schottky barrier diodes with Si intercalation

Published:2020-03 Issue: Volume:107 Page:104866
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Gao Meng-meng,Fan Liu-yan,Chen Zhi-zhan

Funder

National Natural Science Foundation of China

China Academy of Physics

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. The barrier-height inhomogeneity in identically prepared Ni/n-type 6H-SiC Schottky diodes;Duman;Appl. Phys. A,2008

2. Inhomogeneities in Ni/4H-SiC Schottky barriers: localized Fermi-level pinning by defect states;Ewing;J. Appl. Phys.,2007

3. Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height;Roccaforte;Appl. Phys. A,2003

4. Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model;Omar;J. Phys. D Appl. Phys.,2014

5. Improving the barrier height uniformity of 4H-SiC Schottky barrier diodes by nitric oxide post-oxidation annealing;Lee;IEEE Electron. Device Lett.,2014

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