Current Conduction in Nichrome/p-Si Schottky Diode
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-4795-9_27
Reference30 articles.
1. Aboelfotoh MO (1987) Schottky-barrier behavior of a Ti-W alloy on Si(100). J Appl Phys 61(7):2558–2565. https://doi.org/10.1063/1.337933
2. Card HC (1976) Aluminum—Silicon Schottky barriers and ohmic contacts in integrated circuits. IEEE Trans Electron Devices 23(6):538–544. https://doi.org/10.1109/T-ED.1976.18449
3. Eizenberg M et al (1981) Formation of shallow Schottky contacts to Si using Pt-Si and Pd-Si alloy films. J Appl Phys 52(2):861–868. https://doi.org/10.1063/1.328850
4. Hiraki A (1983) Low temperature reactions at Si/metal interfaces; what is going on at the interfaces? Surf Sci Rep 3(7):357–412. https://doi.org/10.1016/0167-5729(84)90003-7
5. Kumar V et al (2014) Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor. J Vac Sci Technol B, Nanotechnol Microelectron. Mater, Process, Meas, Phenom 32(4):041203. https://doi.org/10.1116/1.4884756.
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