Author:
Thanmayee K.G.S.,Putta Sreenija,Krishna D.V.
Reference18 articles.
1. Interface improvement of epitaxial 4H-SiC based Schottky didoes by selective heavy ion irradiation;Kumar;Appl. Nanosci.,2020
2. Electronic transport in epitaxial 4H–SiC based Schottky diodes modified selectively by swift heavy ions;Kumar;Mater. Sci. Semicond. Process.,2020
3. Tailoring Surface and Electrical Properties of Ni/4H-nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation;Kumar;Phys. Status Solidi,2018
4. Improvement in reverse bias leakage current of Ni/4H-nSiC Schottky barrier diodes via MeV selective ion irradiation;Kumar;IOP Conf. Ser. Mater. Sci. Eng.,2018
5. Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO 2 /4H-nSiC Schottky barrier diodes;Kumar;Phys. Status Solidi,2016
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