Tailoring Surface and Electrical Properties of Ni/4H-nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation-Reference-Cited by-同舟云学术

Tailoring Surface and Electrical Properties of Ni/4H-nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation

Published:2018-01-08 Issue:5 Volume:215 Page:1700555
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kumar Vibhor¹²³,Maan Anup S.²,Akhtar Jamil³

Affiliation:

1. Department of Electrical Engineering; Indian Institute of Technology; Delhi-110016 India

2. Department of Physics; Maharishi Dayanand University; Rohtak (Haryana)-124001 India

3. CSIR-Central Electronics Engineering Research Institute (CEERI); Pilani (Rajasthan)-333031 India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

2. Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors

3. Bevel Junction Termination Extension—A New Edge Termination Technique for 4H-SiC High-Voltage Devices

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