Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications-Reference-Cited by-同舟云学术

Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications

Published:2005-02 Issue:1-3 Volume:8 Page:25-30
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Radamson H.H.,Hållstedt J.,Suvar E.,Menon C.,Östling M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Bandgap and strain engineering in SiGeC heterojunction bipolar transistors;Yuki;Jpn J Appl Phys,2001

2. Band structure engineering in Si–Ge structures;Jaros;Diffus Defect Data Part B,1996

3. Band gap narrowing in strained Si1−xGex based on (001)Si substrate;Jin;Solid-State Electron,2001

4. High-mobility Si and Ge structures;Schaffler;Semicond Sci Technol,1997

5. Yeo Y-C, Lu Q, King T–J, Hu C, Kawashima T, Oishi M, Mashiro S, Sakai J. Enhanced performance in sub-100nm CMOSFETs using strained epitaxial silicon–germanium. IEDM Tech Digest 2000. p. 753.

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