Author:
Jin Hai-Yan,Zhang Li-Chun
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Oda K, Ohue E, Tanabe M, Onai T, Washio K. 130 GHz fT SiGe HBT technology. IEDM Tech Dig 1997;791–4
2. Schuppen A, Erben U, Gruhle A, Kibbel H, Schumacher H, Konig U. Enhanced SiGe heterojunction bipolar transistors with 160 GHz fmax. IEDM Tech Dig 1995;743
3. The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs, and GaP;Thurmond;J Electrochem Soc,1975
4. Deformation Potential in Germanium from Optical Absorption Lines for Exciton Formation
5. Indirect band gap of coherently strained GexSi1−x bulk alloys on (001) silicon substrates;People;Phys Rev B,1985
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献