Study of charge carrier quantization in strained Si-nMOSFETs

Author:

Nguyen C.D.,Pham A.T.,Jungemann C.,Meinerzhagen B.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Electron transport in strained Si layers on Si1-xGex substrates;Vogelsang;Appl Phys Lett,1993

2. Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors;Takagi;J Appl Phys,1996

3. Welser J, Hoyt JL, Takagi S, Gibbons JF. Strain dependence of the performance enhancement in strained-Si n-MOSFETs. In: IEDM Technical Digest 1994. p. 373–6.

4. Fabrication and analysis of deep submicron strained-Si N-MOSFETs;Rim;IEEE Trans Electron Devices,2000

5. Jungemann C, Nguyen CD, Neinhüs B, Decker S, Meinerzhagen B. Improved modified local density approximation for modeling of size quantization in NMOSFETs. In: MSM'2001, international conference on modeling and simulation of microsystems. (USA): 2001. p. 458–61.

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