Analytical Modeling of Threshold Voltage of Ion-Implanted Strained-Si-on-Insulator (SSOI) MOSFETs-Reference-Cited by-同舟云学术

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Analytical Modeling of Threshold Voltage of Ion-Implanted Strained-Si-on-Insulator (SSOI) MOSFETs

Published:2014-06-01 Issue:3 Volume:9 Page:442-448
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Rawat Gopal,Goel Ekta,Kumar Sanjay,Kumar Mirgender,Dubey Sarvesh,Jit S.

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A fractional-order equivalent model for characterizing the interelectrode capacitance of MOSFETs;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2022-03-24

2. Study on amplitude of the noise power spectrum for nano-strained Si NMOSFET;Radiation Effects and Defects in Solids;2022-03-14

3. Extended Kalman filter-based state estimation of MOSFET circuit;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2019-10-24

4. Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET;Radiation Effects and Defects in Solids;2019-09-29

5. 2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs;Indian Journal of Physics;2017-05-13

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