2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Author:

Goel Ekta,Singh Kunal,Singh Balraj,Kumar Sanjay,Jit SatyabrataORCID

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Reference36 articles.

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3. T Sanuki, A Oishi, Y Morimasa, S Aota, T Kinoshita, R Hasumi, Y Takegawa, K Isobe, H Yoshimura, M Iwai, K Sunouchi and T Noguchi In Electron Devices Meeting, 2003. IEDM’03 Technical Digest. IEEE International IEEE (2003)

4. V Venkataraman, S Nawal and M J Kumar IEEE Trans. Electron Devices 54 554 (2007)

5. R Kuchipudi and H Mahmoodi In 8th International Symposium on Quality Electronic Design (ISQED’07) pp 27–32 IEEE (2007)

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