Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET-Reference-Cited by-同舟云学术

Influence of gamma ray radiation on two-dimensional sub-threshold current of strained Si nano NMOSFET

Published:2019-09-29 Issue:9-10 Volume:174 Page:928-937
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Hao Minru¹,Fu Haiwei¹,Zhang Yan¹,Hao Feng²,Chen Guoxiang¹,Hu Huiyong³,Liao Chenguang³,Li Yan¹

Affiliation:

1. School of Science, Ministry of Key Laboratory on Photoelectric Oil-Gas Logging and Detecting, Xi’an Shiyou University, Xi’an, People’s Republic of China

2. Xi’an University of Science and Technology, Xi’an, People’s Republic of China

3. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Device, Xidian University, Xi’an, People’s Republic of China

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2019.1669036

Reference21 articles.

1. Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

2. Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

3. Analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor

4. Modeling of the effect of uniaxial mechanical strain on drain current and threshold voltage of an n-type MOSFET

5. Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs