Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ -doping with Si-layer insertion-Reference-Cited by-同舟云学术

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Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ -doping with Si-layer insertion

Published:2017-11 Issue: Volume:70 Page:83-85
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Yamada Michihiro,Fujita Yuichi,Yamada Shinya,Kanashima Takeshi,Sawano Kentarou,Hamaya Kohei

Funder

Cabinet Office of Government of Japan

Grant-in-Aid for Scientific Research

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Electrical spin injection and transport in germanium

2. Electrical creation of spin accumulation in -type germanium

3. Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

4. Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Band

5. Comparison of spin lifetimes inn-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements

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1. Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys;Materials Science in Semiconductor Processing;2024-05

2. Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain;Materials Science in Semiconductor Processing;2023-11

3. Beyond CMOS;2021 IEEE International Roadmap for Devices and Systems Outbriefs;2021-11

4. Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors;Journal of Applied Physics;2021-05-14

5. Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi;Applied Physics Letters;2021-04-19

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