Comparison of spin lifetimes inn-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements-Reference-Cited by-同舟云学术

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Comparison of spin lifetimes inn-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements

Published:2012-12-04 Issue:1 Volume:28 Page:015018
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chang L-T,Han W,Zhou Y,Tang J,Fischer I A,Oehme M,Schulze J,Kawakami R K,Wang K L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=1/a=015018/pdf

Reference37 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact

3. Electronic measurement and control of spin transport in silicon

4. Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

5. Electrical creation of spin polarization in silicon at room temperature

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1. Intrinsic spin transport properties observed in contamination-free graphene-based spin valve;Carbon;2024-09

2. Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor Al0.3Ga0.7As:Si;Physical Review Materials;2022-02-25

3. Spin transport and relaxation in germanium;Journal of Physics D: Applied Physics;2018-08-24

4. Pure spin current transport in a SiGe alloy;Applied Physics Express;2018-04-25

5. Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ -doping with Si-layer insertion;Materials Science in Semiconductor Processing;2017-11

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