Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi-Reference-Cited by-同舟云学术

Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi

Author:

Kudo K.¹,Yamada M.²³^ORCID,Honda S.³⁴^ORCID,Wagatsuma Y.⁵,Yamada S.¹³^ORCID,Sawano K.⁵,Hamaya K.¹³^ORCID

Affiliation:

1. Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan

2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

3. Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan

4. Department of Pure and Applied Physics, Faculty of Engineering Science, Kansai University, 3-3-35 Yamate, Suita 564-8680, Japan

5. Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082, Japan

Funder

Japan Society for the Promotion of Science

Precursory Research for Embryonic Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference55 articles.

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