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The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal

  • Published:2023-05 Issue: Volume:158 Page:107357
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Hou Tong,Zhang Wangyang,Mu Wenxiang,Li Chen,Li Xinru,Ma Xu,Zhang Jin,Wang Huanyang,Jia Zhitai,Liu Duo,Tao Xutang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

2. Perspective—opportunities and future directions for Ga2O3;Mastro;ECS J. Solid State Sci. Technol.,2017

3. Ultrawide‐bandgap semiconductors: research opportunities and challenges;Tsao;Adv. Electron. Mater.,2018

4. Diffusion of dopants and impurities in β-Ga2O3;Sharma;J. Vac. Sci. Technol.,2021

5. Large-size β-Ga2O3 single crystals and wafers;Víllora;J. Cryst. Growth,2004

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