Subsurface damage evolution of β-Ga2O3 (010) substrates during lapping and chemical mechanical polishing-Reference-Cited by-同舟云学术

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Subsurface damage evolution of β-Ga2O3 (010) substrates during lapping and chemical mechanical polishing

Published:2024-08 Issue: Volume:51 Page:104655
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Hou Tong,Ma Xu,Dong Yue,Wang Pei,Li Yang,Jia Zhitai,Mu Wenxiang^ORCID,Tao Xutang^ORCID

Publisher

Elsevier BV

Reference50 articles.

1. Toward emerging gallium oxide semiconductors: a roadmap;Yuan;Fundament. Research,2021

2. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

3. High quality crystal growth and anisotropic physical characterization of β-Ga2O3 single crystals grown by EFG method;Mu;J. Alloys Compd.,2017

4. First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases;He;Phys. Review B,2006

5. Perspective—Opportunities and Future Directions for Ga2O3;Mastro;ECS J. Solid State Sci. Technol.,2017

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