Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

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Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition

Published:2005-08 Issue:2-4 Volume:281 Page:281-289
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chrastina D.,Isella G.,Bollani M.,Rössner B.,Müller E.,Hackbarth T.,Wintersberger E.,Zhong Z.,Stangl J.,von Känel H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference39 articles.

1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

2. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures

3. Tilted magnetic field studies of spin- and valley-splittings in Si/Si1 − xGex heterostructures

4. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy

5. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition

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1. Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth;Japanese Journal of Applied Physics;2024-01-17

2. A dislocation-driven laminated relaxation process in Si1−xGex grown on Si (001) by molecular beam epitaxy;Materials Today Nano;2021-12

3. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics;Physical Review B;2016-08-15

4. Growth of Semiconductor Materials;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07

5. Thin SiGe virtual substrates for Ge heterostructures integration on silicon;Journal of Applied Physics;2014-03-07

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