Thin SiGe virtual substrates for Ge heterostructures integration on silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867368
Reference34 articles.
1. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
2. Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
3. Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells
4. Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon
5. Ge quantum well optoelectronic devices for light modulation, detection, and emission
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1. FDTD analysis of direct optical integration between SiNx waveguides and Ge/SiGe multiple quantum wells on graded buffer for low-voltage optical modulators around the O-band wavelength;Results in Optics;2024-02
2. Thin and locally dislocation-free SiGe virtual substrate fabrication by lateral selective growth;Japanese Journal of Applied Physics;2024-01-17
3. Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon;Revue des composites et des matériaux avancés;2023-10-31
4. Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications;Applied Surface Science;2023-09
5. Structural properties of graded In x Ga 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands;Materials for Quantum Technology;2023-08-14
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