The effect of In content on high-density InxGa1−xAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Determination of composition and strain field of a III∕V quaternary quantum dot system
2. Strain-engineered self-assembled semiconductor quantum dot lattices
3. Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement
4. Multidimensional quantum well laser and temperature dependence of its threshold current
5. Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers
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1. Influence of Indium-Percentage Variation on Dynamical Characteristics of InxGa1-xAs/GaAs(001) Quantum Dot Lasers;Iranian Journal of Science and Technology, Transactions A: Science;2016-09-06
2. Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures;Applied Physics Letters;2016-08-22
3. Energy Level Engineering in InxGa1–xAs/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage;Journal of Nanoelectronics and Optoelectronics;2016-06-01
4. The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy;Journal of Theoretical and Applied Physics;2013
5. Self-consistent Maxwell-Bloch theory of quantum-dot-population switching in photonic crystals;Physical Review A;2011-05-09
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