Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1812365
Reference11 articles.
1. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots
2. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
3. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
4. 1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots
5. Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InP
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3. The External Electric and Magnetic Fields Effect on Binding Energy of Hydrogenic Donor Impurity in a InGaAsP/InP Core–Shell Quantum Dot;Journal of Nanoelectronics and Optoelectronics;2019-07-01
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5. Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers;Chinese Physics Letters;2015-01
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