Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121922
Reference11 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
3. Nanoscale InP Islands for Quantum Box Structures by Hydride Vapor Phase Epitaxy
4. Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs
5. Strained InGaAs quantum disk laser with nanoscale active region fabricated with self-organisation on GaAs (311)B substrate
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