Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358483
Reference20 articles.
1. Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires
2. Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition
3. Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
4. (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition
5. Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
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4. Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface;ACS Applied Materials & Interfaces;2023-06-07
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