Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface
Author:
Affiliation:
1. National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
Funder
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.3c05725
Reference41 articles.
1. Quantum‐well infrared photodetectors
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3. nBn detector, an infrared detector with reduced dark current and higher operating temperature
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5. Photodetectors based on graphene, other two-dimensional materials and hybrid systems
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