The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy-Reference-Cited by-同舟云学术

The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy

Published:2013 Issue:1 Volume:7 Page:27
ISSN:2251-7235
Container-title:Journal of Theoretical and Applied Physics
language:en
Short-container-title:Journal of Theoretical and Applied Physics

Author:

Aryanto Didik,Othaman Zulkafli,Ismail Abd

Publisher

Springer Science and Business Media LLC

Subject

Physics and Astronomy (miscellaneous)

Reference20 articles.

1. Self organization phenomena of quantum dots grown by metalorganic chemical vapour deposition

2. Quantum dot lasers: breakthrough in optoelectronics

3. GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

4. Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

5. The effect of In content on high-density InxGa1−xAs quantum dots

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1. On the electronic states in lens-shaped quantum dots;physica status solidi (b);2017-07-12

2. Influence of Indium-Percentage Variation on Dynamical Characteristics of InxGa1-xAs/GaAs(001) Quantum Dot Lasers;Iranian Journal of Science and Technology, Transactions A: Science;2016-09-06

3. Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers;Journal of Theoretical and Applied Physics;2016-06-20

4. Energy Level Engineering in InxGa1–xAs/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage;Journal of Nanoelectronics and Optoelectronics;2016-06-01

5. Effect of GaAs multi-atomic steps thickness on the structural and optical properties of self-assembled In0.5Ga0.5As quantum dots;AIP Conference Proceedings;2016