Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
2. High-performance InAs quantum-dot lasers near 1.3 μm
3. Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses
4. Thermally activated carrier transfer and luminescence line shape in self‐organized InAs quantum dots
5. Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
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