Energy Level Engineering in InxGa1–xAs/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage
Author:
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Role of Pyramidal Low-Dimensional Semiconductors in Advancing the Field of Optoelectronics;Photonics;2024-04-15
2. Impact of Dot Size on Dynamical Characteristics of InAs/GaAs Quantum Dot Lasers;Journal of Nanoelectronics and Optoelectronics;2017-09-01
3. Effect of temperature on $$\mathbf{In}_{{\varvec{x}}} \mathbf{Ga}_{1-{{\varvec{x}}}} \mathbf{As}/\mathbf{GaAs}$$ In x Ga 1 - x As / GaAs quantum dots;Pramana;2017-07-12
4. Investigation of dynamical characteristics and modulation response function of InAs/InP (311)B quantum dot lasers with different QD size;Photonics and Nanostructures - Fundamentals and Applications;2017-07
5. The Influence of Gain Compression Factor on Dynamical Properties of Single Level InAs/GaAs Quantum Dot Lasers;Iranian Journal of Science and Technology, Transactions A: Science;2017-03-13
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