Determination of composition and strain field of a III∕V quaternary quantum dot system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1823602
Reference9 articles.
1. GaSb quantum dot growth using InAs quantum dot stressors
2. Many-particle effects in type II quantum dots
3. Temporal evolution of GaSb/GaAs quantum dot formation
4. Spontaneous ordering of nanostructures on crystal surfaces
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1. Influence of quantum-dots density on average in-plane strain of optoelectronic devices investigated by high-resolution X-ray diffraction;physica status solidi (a);2009-06-22
2. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction;Journal of Applied Physics;2009-02
3. Influence of capping layer and atomic interdiffusion on the strain distribution in single and double self-assembled InAs∕GaAs quantum dots;Applied Physics Letters;2008-02-25
4. Structural Characterisation of Quantum Dots by X-Ray Diffraction and TEM;Semiconductor Nanostructures;2008
5. Composition analysis of nanostructured materials by TEM – possibilities and limitations;Acta Crystallographica Section A Foundations of Crystallography;2007-08-22
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