Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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1. Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2023-03
2. Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy;Thin Solid Films;2022-04
3. Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy;Journal of Crystal Growth;2015-05
4. Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation;Materials Science in Semiconductor Processing;2014-06
5. Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys;Journal of Crystal Growth;2013-01
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