Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation-Reference-Cited by-同舟云学术

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Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation

Published:2014-06 Issue: Volume:22 Page:92-100
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Bachir Bouiadjra Wadi,Kadaoui Mustapha amine,Saidane Abdelkader,Henini Mohamed,Shafi Muhammad

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

2. Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

3. Experimental evidence of carrier leakage in InGaAsN quantum-well lasers

4. Low-threshold CW GaInNAsSb∕GaAs laser at 1.49 [micro sign]m

5. Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy

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