Analysis of the effect of symmetric/asymmetric CUSP magnetic fields on melt/crystal interface during Czochralski silicon growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth
2. The effects of several growth parameters on the formation behavior of point defects in Czochralski-grown silicon crystals
3. Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals
4. Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth
5. Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth
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1. Optimization of grain-selection behavior in the spiral selector during Cusp-magnetic-field-assisted directional solidification of single-crystal superalloy;Journal of Materials Research and Technology;2024-03
2. Extended Hypothesis for Reynolds Stress Tensor and Turbulent Heat Flux Modeling Within a Novel K‐ε Model for Prediction of Crystal Growth from the Melt;Crystal Research and Technology;2023-11-23
3. Investigation of the Influence of Solid–Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects;Silicon;2023-11-18
4. Investigation of the Influence of Solid-Liquid Interface Shape Based on the Jordan Model on Cz-Silicon Dislocation Defects;2023-10-05
5. Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields;Crystals;2023-09-27
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