Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals
Author:
Publisher
Elsevier BV
Subject
Geochemistry and Petrology,General Chemistry
Reference14 articles.
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4. Homogeneous dopant distribution of silicon crystal growth by vertical magnetic field-applied Czochralski method [J];Hoshikawa;Jpn. J. Appl. Phys.,1984
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