Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Challenges for economical growth of high quality 300 mm CZ Si crystals
2. Analysis of turbulent flow in silicon melts by optical temperature measurement
3. Growth of silicon crystal with a diameter of 400mm and weight of 400kg
4. Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth
5. 3D global analysis of CZ-Si growth in a transverse magnetic field with rotating crucible and crystal
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2. Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field;Crystal Growth & Design;2023-05-08
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