Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution-Reference-Cited by-同舟云学术

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Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution

Published:2015-08 Issue: Volume:423 Page:45-49
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mitani Takeshi,Komatsu Naoyoshi,Takahashi Tetsuo,Kato Tomohisa,Harada Shunta,Ujihara Toru,Matsumoto Yuji,Kurashige Kazuhisa,Okumura Hajime

Funder

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

2. Evolution of threading screw dislocation conversion during solution growth of 4H-SiC

3. Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds;Journal of Crystal Growth;2024-05

2. Faceted-rough surface in the non-equilibrium steady state near equilibrium;Journal of Crystal Growth;2024-04

3. Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC;Crystal Growth & Design;2024-03-06

4. Effect of Solution Components on Solvent Inclusion in SiC Solution Growth;Crystal Growth & Design;2024-02-02

5. Optimization of Carbon Transport in Top-Seeded Solution Growth of Al-Doped Sic;2024

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