Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties-Reference-Cited by-同舟云学术

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Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties

Published:2015-11 Issue: Volume:430 Page:41-45
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jang Jeonghwan,Moon Daeyoung,Lee Hyo-Jeong,Lee Donghyun,Choi Daehan,Bae Dukkyu,Yuh Hwankuk,Moon Youngboo,Park Yongjo,Yoon Euijoon

Funder

BK21 Plus SNU Materials Division for Educating Creative Global Leaders

Ministry of Trade, Industry and Energy (MOTIE), Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

2. Thermal stress in GaN epitaxial layers grown on sapphire substrates

3. Light-Emitting Diodes;Schubert,2006

4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

5. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

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